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TD9944 Low Threshold Dual N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS 240V RDS(ON) (max) 6.0 VGS(th) (max) 2.0V ID(ON) (min) 1.0A Order Number/Package SO-8 TD9944TG
Features
Dual N-channel devices Low threshold -- 2.0V max. High input impedance Low input capacitance -- 125pF max. Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage
Low Threshold DMOS Technology
These dual low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches S1
1 2 3 4
8 7 6 5
Pin Configuration
D1 D1 D2 D2
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS 20V -55C to +150C 300C
G1 S2 G2
SO-8 top view
Note: See Package Outline section for dimensions. 12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TD9944
Electrical Characteristics (each device, @ 25C unless otherwise specified)
Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 240 0.6 2.0 -5.0 100 10 1.0 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current 0.5 1.0 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 300 600 65 35 10 125 70 25 10 10 20 20 1.8 V ns VGS = 0V, ISD = 1.0A VGS = 0V, ISD = 1.0A ns VDD = 25V, ID = 1.0A, RGEN = 25 pF VGS = 0V, VDS = 25V f = 1 MHz 1.9 2.8 4.0 4.0 6.0 6.0 1.4 %/C m Typ Max Unit V V mV/C nA A mA A Conditions VGS = 0V, ID = 2mA VGS = VDS, ID= 1mA VGS = VDS, ID= 1mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 4.5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 4.5V, ID = 250mA VGS = 10V, ID = 0.5A VGS = 10V, ID = 0.5A VDS = 25V, ID = 0.5A
Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
10V INPUT 0V
90% 10%
t(ON)
PULSE GENERATOR
Rgen
t(OFF) tr td(OFF) tF 10%
td(ON)
VDD OUTPUT 0V
10%
INPUT
90%
90%
2
RL OUTPUT
D.U.T.
TD9944
Typical Performance Curves
Output Characteristics
4.0 2.5
Saturation Characteristics
VGS = 10V
3.2 2.0
VGS = 10V
8V 6V
ID (amperes)
8V 6V
ID (amperes)
2.4
1.5
4V
1.0
1.6
4V
0.8
0.5
3V
3V
0 0 10 20 30 40
2V
50
2V
0 0 2 4 6 8 10
VDS (volts) BVDSS Variation with Temperature
10 1.1 8
VDS (volts) On-Resistance vs. Drain Current
V GS = 4.5V VGS = 10V
BVDSS (normalized)
RDS(ON) (ohms)
-50 0 50 100 150
6
1.0
4
2 0.9 0 0 1 2 3 4 5
Tj ( C) Transfer Characteristics
3.0
ID (amperes) V(th) and RDS Variation with Temperature
2.4 1.4
VDS = 25V
2.5
25C
1.2
ID (amperes)
2.0
V(th) @ 1mA
1.0
1.6
1.5
1.2 0.8 0.8
1.0
0.5 0.6 0 0 2 4 6 8 10 -50 0 50 100 150 0.4
VGS (volts)
Tj ( C)
3
RDS(ON) (normalized)
VGS(th) (normalized)
TA = -55C
150C
RDS(ON) @ 10V, 0.5A
2.0
TD9944
Typical Performance Curves
Capacitance vs. Drain-to-Source Voltage
200 10
Gate Drive Dynamic Characteristics
f = 1MHz
8 150
VDS = 10V
C (picofarads)
VGS (volts)
6
100
VDS = 40V
4
150 pF
CISS
50
COSS
CRSS
0 0 10 20 30 40
2
0 0 0.4
63pF
0.8 1.2 1.6 2.0
VDS (volts) Transconductance vs. Drain Current
1.0 2.0
QG (nanocoulombs) Power Dissipation vs. AmbientTemperature
VDS = 25V TA = -55C
0.8 TO-243AA
GFS (siemens)
TA = 25C
PD (watts)
0.6
1.0
0.4
TA = 150C
0.2
0 0 0.8 1.6 2.4 3.2 4.0
0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
10 1.0
TC ( C) Thermal Response Characteristics
TO-243AA (pulsed) 1.0
Thermal Resistance (normalized)
TA = 25C
0.8
ID (amperes)
0.6
TO-243AA
0.4
0.1
PD = 0.55W TC = 25 C
0.2
TO-243AA (DC) 0.01 1 10 100 1000
0 0.001 0.01 0.1 1 10
VDS (volts)
tp (seconds)
12/13/010
(c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com

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